Böcker i Cambridge Studies in Semiconductor Physics and Microelectronic Engineering-serien

Self-contained book providing an up-to-date description of plasma etching and deposition in semiconductor fabrication. Presents the basic physics and chemistry of these processes, and shows how they can be accurately modelled. Suitable as a graduate-level textbook, and will also be a useful reference for practising engineers in the semiconductor industry.

This is the first book to give a complete overview of the properties of deep-level, localized defects in semiconductors. These metastable defects exhibit complex interactions with the surrounding material, and can significantly affect the performance and stability of certain semiconductor devices.

This is the first book to describe thoroughly the many facets of doping in compound semiconductors. Equal emphasis is given to the fundamental materials physics and to the technological aspects of doping. The various techniques and the key characteristics of dopants that are employed in III-V semiconductors are presented.

This book gives a comprehensive description of the key theoretical and experimental aspects of resonant tunnelling diodes, one of the most important types of nanostructure devices. The book will be valuable to graduate students and researchers in quantum transport physics and device engineering.

This comprehensive book provides an overview of the key techniques used in the fabrication of micron-scale structures in silicon. It is a blend of detailed experimental and theoretical material, and will be of great interest to graduate students and researchers in electrical engineering and materials science whose work involves the study of micro-electromechanical systems (MEMS).

The advent of semiconductor structures whose characteristic dimensions are smaller than the mean free path of carriers has led to the development of novel devices, and advances in theoretical understanding of mesoscopic systems or nanostructures. This book has been thoroughly revised and provides a much-needed update on the very latest experimental research into mesoscopic devices and develops a detailed theoretical framework for understanding their behaviour. Beginning with the key observable phenomena in nanostructures, the authors describe quantum confined systems, transmission in nanostructures, quantum dots, and single electron phenomena. Separate chapters are devoted to interference in diffusive transport, temperature decay of fluctuations, and non-equilibrium transport and nanodevices. Throughout the book, the authors interweave experimental results with the appropriate theoretical formalism. The book will be of great interest to graduate students taking courses in mesoscopic physics or nanoelectronics, and researchers working on semiconductor nanostructures.

Advances in semiconductor technology have made possible the fabrication of structures whose dimensions are much smaller than the mean free path of an electron. This book gives a thorough account of the theory of electronic transport in such mesoscopic systems. After an initial chapter covering fundamental concepts, the transmission function formalism is presented, and used to describe three key topics in mesoscopic physics: the quantum Hall effect; localisation; and double-barrier tunnelling. Other sections include a discussion of optical analogies to mesoscopic phenomena, and the book concludes with a description of the non-equilibrium Green's function formalism and its relation to the transmission formalism. Complete with problems and solutions, the book will be of great interest to graduate students of mesoscopic physics and nanoelectronic device engineering, as well as to established researchers in these fields.