The study of Silicone Germanium strained layers has implications for material scientists and engineers, in particular those working on the design and modelling of semi-conductor devices. This work describes its developments in technology and modelling. It also includes a bibliography of over 400 papers providing an overview of the subject.
Prenumerera på vårt nyhetsbrev för att få fantastiska erbjudanden och inspiration för din nästa läsning.
Genom att registrera dig accepterar du vår personuppgiftspolicy.