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Effect of Disorder and Defects in Ion-Implanted Semiconductors: Optical and Photothermal Characterization

Om Effect of Disorder and Defects in Ion-Implanted Semiconductors: Optical and Photothermal Characterization

Focusing on the physics of the annealing kinetics of the damaged layer, this book presents an overview of characterization techniques and a comparison of the information on annealing kinetics. It also provides basic knowledge of ion implantation-induced defects; focuses on physical mechanisms of defect annealing; and more.

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  • Språk:
  • Engelska
  • ISBN:
  • 9780127521466
  • Format:
  • Inbunden
  • Sidor:
  • 316
  • Utgiven:
  • 12 Juni 1997
  • Mått:
  • 152x229x22 mm.
  • Vikt:
  • 620 g.
  Fri leverans
Leveranstid: 2-4 veckor
Förväntad leverans: 24 Oktober 2024

Beskrivning av Effect of Disorder and Defects in Ion-Implanted Semiconductors: Optical and Photothermal Characterization

Focusing on the physics of the annealing kinetics of the damaged layer, this book presents an overview of characterization techniques and a comparison of the information on annealing kinetics. It also provides basic knowledge of ion implantation-induced defects; focuses on physical mechanisms of defect annealing; and more.

Användarnas betyg av Effect of Disorder and Defects in Ion-Implanted Semiconductors: Optical and Photothermal Characterization



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