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  4. Heavily n-type doped silicon and the dislocation formation during its growth by the Czochralski method.

Heavily n-type doped silicon and the dislocation formation during its growth by the Czochralski method.

av Ludwig Stockmeier
Heavily n-type doped silicon and the dislocation formation during its growth by the Czochralski method. av Ludwig Stockmeier
Om Heavily n-type doped silicon and the dislocation formation during its growth by the Czochralski method.

The growth of heavily n-type doped silicon by the Czochralski method is frequently accompanied by the formation of dislocations. These dislocations lead to a reduction of yield and have therefore to be prevented. In this dissertation the reason for the formation of the dislocations is analyzed in detail.

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  • Språk:
  • Engelska
  • ISBN:
  • 9783839613450
  • Format:
  • Häftad
  • Sidor:
  • 204
  • Utgiven:
  • 1. augusti 2018
  • Mått:
  • 148x210x11 mm.
  Fri leverans
Leveranstid: 2-4 veckor
Förväntad leverans: 28. januari 2025

Om Ludwig Stockmeier

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Beskrivning av Heavily n-type doped silicon and the dislocation formation during its growth by the Czochralski method.

The growth of heavily n-type doped silicon by the Czochralski method is frequently accompanied by the formation of dislocations. These dislocations lead to a reduction of yield and have therefore to be prevented. In this dissertation the reason for the formation of the dislocations is analyzed in detail.

Användarnas betyg av Heavily n-type doped silicon and the dislocation formation during its growth by the Czochralski method.



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