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Highly Integrated Gate Drivers for Si and GaN Power Transistors

Om Highly Integrated Gate Drivers for Si and GaN Power Transistors

The authors cover the full range from fundamentals to implementation details including topics like power stages, various kinds of gate drivers (resonant, non-resonant, current-source, voltage-source), gate drive schemes, driver supply, gate loop, gate driver power efficiency and comparison silicon versus GaN transistors.

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  • Språk:
  • Engelska
  • ISBN:
  • 9783030689391
  • Format:
  • Inbunden
  • Sidor:
  • 124
  • Utgiven:
  • 1 April 2021
  • Utgåva:
  • 12021
  • Mått:
  • 155x235x0 mm.
  • Vikt:
  • 454 g.
  Fri leverans
Leveranstid: 2-4 veckor
Förväntad leverans: 6 Augusti 2024

Beskrivning av Highly Integrated Gate Drivers for Si and GaN Power Transistors

The authors cover the full range from fundamentals to implementation details including topics like power stages, various kinds of gate drivers (resonant, non-resonant, current-source, voltage-source), gate drive schemes, driver supply, gate loop, gate driver power efficiency and comparison silicon versus GaN transistors.

Användarnas betyg av Highly Integrated Gate Drivers for Si and GaN Power Transistors



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